Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers-Reference-Cited by-同舟云学术

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Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Published:2011-10 Issue:1 Volume:520 Page:662-666
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Zhao Larry,Lofrano Melina,Croes Kristof,Van Besien Els,Tőkei Zsolt,Wilson Christopher J.,Degraeve Robin,Kauerauf Thomas,Beyer Gerald P.,Claeys Cor

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Proceedings of International Interconnect Technology Conference (IITC);Brain,2009

2. Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions

3. Kinetics of copper drift in low-κ polymer interlevel dielectrics

4. Kinetics of Ta ions penetration into porous low-k dielectrics under bias-temperature stress

5. Effect of Ta migration from sidewall barrier on leakage current in Cu/SiOCH low-k dielectrics

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