Improving the etching performance of high-aspect-ratio contacts by wafer temperature control-Reference-Cited by-同舟云学术

Improving the etching performance of high-aspect-ratio contacts by wafer temperature control

Published:2016-04 Issue: Volume:44 Page:87-92
ISSN:0141-6359
Container-title:Precision Engineering
language:en
Short-container-title:Precision Engineering

Author:

Tandou Takumi,Kubo Seiji,Yokogawa Ken’etsu,Negishi Nobuyuki,Izawa Masaru

Publisher

Elsevier BV

Subject

General Engineering

Reference11 articles.

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2. High-aspect-ratio hole etching in UHF-ECR plasma;Negishi,2000

3. Effects of mask and necking deformation on bowing and twisting in high-aspect-ratio contact hole etching;Miyake;Jpn J Appl Phys,2009

4. Investigation on the mechanism of SiO2 etching taking into account radical sticking in a hole;Izawa,1999

5. Developments of plasma etching technology for fabrication semiconductor devices;Abe;Jpn J Appl Phys,2008

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