1. Berti, A C, Bolkhovsky V 1992 A manufacturable process for the formation of self aligned cobalt silicide in a submicrometer CMOS technology. VMIC Tech. Dig. 267
2. Defect generation during epitaxial growth of CoSi2 on miniature sized (100) Si substrate and its effect on electrical properties;Byun;MRS Symp. Proc.,1996
3. Growth of epitaxial CoSi2 on (100)Si;Dass;Appl. Phys. Lett.,1991
4. Effects of arsenic doping on chemical vapor deposition of titanium silicide;Fang;J. Electrochem. Soc.,1999
5. Leakage mechanism and optimized conditions of Co salicide process for deep submicron CMOS devices;Goto;IEDM Tech. Dig.,1995