3D GaN nanoarchitecture for field-effect transistors-Reference-Cited by-同舟云学术

3D GaN nanoarchitecture for field-effect transistors

Published:2019-05 Issue: Volume:3 Page:59-81
ISSN:2590-0072
Container-title:Micro and Nano Engineering
language:en
Short-container-title:Micro and Nano Engineering

Author:

Fatahilah Muhammad Fahlesa,Strempel Klaas,Yu Feng,Vodapally Sindhuri,Waag Andreas,Wasisto Hutomo Suryo

Funder

Lower Saxony Ministry for Science and Culture (MWK) Landesmittel des Niedersächsischen Vorab

German Research Foundation

Indonesian-German Center for Nano and Quantum Technologies (IG-Nano)

Ministry of Research, Technology and Higher Education of the Republic of Indonesia (RISTEKDIKTI)

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference150 articles.

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2. Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion;Kikkawa,2001

3. Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film;Huang;IEEE Electron Device Lett.,2012

4. Current collapse suppression by gate field-plate in AlGaN/GaN HEMTs;Hasan;IEEE Electron Device Lett.,2013

5. The 2018 GaN power electronics roadmap;Amano;J. Phys. D. Appl. Phys.,2018

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