Additional Siconi™ pre-clean for reliable TiSix contacts in advanced imager technologies-Reference-Cited by-同舟云学术

Additional Siconi™ pre-clean for reliable TiSix contacts in advanced imager technologies

Published:2019-03 Issue: Volume:2 Page:104-109
ISSN:2590-0072
Container-title:Micro and Nano Engineering
language:en
Short-container-title:Micro and Nano Engineering

Author:

Grégoire M.,Horvat B.,Bozon B.N.,Combe D.,Dabertrand K.,Roy D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

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2. Precleans challenges on middle-of-the-line contacts for 14 nm technologies and beyond;Ferrer,2016

3. Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER);Yang,2016

4. 14nm FDSOI Technology for High-Speed and Energy-Efficient CMOS;Weber;ECS Trans.,2015

5. Silicides for integrated circuits: TiSi2 CoSi2;Maex;Mater. Sci. Eng.,1993

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2. Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study;Journal of Vacuum Science & Technology A;2023-04-26

3. Impact of nanosecond laser energy density on the C40-TiSi2 formation and C54-TiSi2 transformation temperature;Journal of Applied Physics;2020-08