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An interchangeable silicon pressure sensor with on-chip compensation circuitry

  • Published:1989-07 Issue:3-4 Volume:18 Page:239-245
  • ISSN:0250-6874
  • Container-title:Sensors and Actuators
  • language:en
  • Short-container-title:Sensors and Actuators

Author:

Kopystynski P.,Obermeier E.

Publisher

Elsevier BV

Subject

General Engineering

Reference8 articles.

1. Pressure sensitivity in anisotropically etched thin-diaphragm sensors;Clark;IEEE Trans. Electron Devices,1979

2. Integrated signal conditioning for silicon pressure sensors;Borky;IEEE Trans. Electron Devices,1979

3. Temperature sensitivity in silicon piezoresistive pressure transducers;Kim;IEEE Trans. Electron Devices,1983

4. Piezoresistive properties of silicon diffused layers;Tufte;J. Appl. Phys.,1963

5. Integrated piezoresistive pressure sensor with both voltage and frequency output;Sugiyama;Sensors and Actuators,1983

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current-Mode Wheatstone Bridge;Analog Circuits and Signal Processing;2018-10-31

2. Novel temperature compensation technique for force-sensing piezoresistive devices;Journal of Micromechanics and Microengineering;2011-10-12

3. A Microvalve With Integrated Sensors and Customizable Normal State for Low-Temperature Operation;Journal of Microelectromechanical Systems;2009-08

4. UNCERTAINTY ANALYSIS OF MICRO DIFFERENTIAL PRESSURE SENSOR USING INTERVAL ANALYSIS;International Journal on Smart Sensing and Intelligent Systems;2009

5. A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors;IEEE Transactions on Electron Devices;2003-02
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