The inclusion of multiple reflections in the formulation of the Faraday effect in semiconductors-Reference-Cited by-同舟云学术

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The inclusion of multiple reflections in the formulation of the Faraday effect in semiconductors

Published:1963-12 Issue:5 Volume:7 Page:304-306
ISSN:0031-9163
Container-title:Physics Letters
language:en
Short-container-title:Physics Letters

Author:

Donovan B.,Medcalf T.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference7 articles.

1. Microwave free carrier Faraday effect in semiconductors--perturbation theory for guided waves

2. Electromagnetic theory;Stratton,1941

3. Proc. of Int. Semiconductor Conf.;Palik,1962

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chapter 3 Magneto-optical kerr spectra;Handbook of Magnetic Materials;2001

2. Free-carrier Faraday effect in n-type InSb with a pulsed 0.337 mm HCN laser;Journal of Physics D: Applied Physics;1982-10-14

3. Free carriers's effective mass and relaxation-time analysis by high-pulsed-field Faraday oscillations in III-V compounds;Physical Review B;1976-03-15

4. Investigations of microwave Faraday rotation in single crystals of n‐type germanium at liquid‐N2 temperature;Journal of Applied Physics;1974-12

5. Size and Surface Effects on the Magneto-Optical Properties of Metallic Thin Films;Physical Review B;1970-05-15

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