The effect of pressure on the optical energy gap in indium antimonide
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference5 articles.
1. Solids under pressure;Paul,1963
2. Pressure Dependence of Resistivity of Indium Antimonide to 70,000 Atmospheres
3. On a relation between critical pressure and energy gap in semiconductors
4. Effect of Pressure on the Electrical Conductivity of InSb
5. Effect of Pressure on the Electrical Properties of Indium Antimonide
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Determination of the Deformation Potential Constant of the Conduction Band in InSb by the Electron Mobility in the Intrinsic Range;Japanese Journal of Applied Physics;1991-02-15
2. Magnetophonon Effect in p-InSb;Journal of the Physical Society of Japan;1980-09
3. Pressure dependent conductivity in InSb;Physica Status Solidi (b);1979-09-01
4. Cyclotron resonance study of conduction electrons in n-type indium antimonide under a strong magnetic field—I;Journal of Physics and Chemistry of Solids;1979-01
5. Determination of the conduction-band structure of InSb subject to mechanical strain from measurements of the reflectivity spectrum;Physical Review B;1978-12-15
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