Electromigration and reliability in submicron metallization and multilevel interconnection-Reference-Cited by-同舟云学术

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Electromigration and reliability in submicron metallization and multilevel interconnection

Published:1993-03 Issue:3-4 Volume:33 Page:176-188
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Kwok Thomas

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference42 articles.

1. Electro and Thermo-Transport in Metals and Alloys;Ho,1977

2. Thin Films: Interdiffusion and Reactions;d'Heurle,1978

3. Diffusion Phenomena in Thin Films;Kwok,1988

4. Dependence of Electromigration‐Induced Failure Time on Length and Width of Aluminum Thin‐Film Conductors

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1. Copper Electromigration Improvement Through Aluminum Barrier and Related Process Optimization;2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2024-05-13

2. The effect of electromigration on the lifetime and performance of flexible interconnections fabricated by laser printing and sintering;Applied Surface Science;2020-03

3. A Critical Review on the Electromigration Effect, the Electroplastic Effect, and Perspectives on the Effects of Electric Current Upon Alloy Phase Stability;JOM;2019-07-26

4. Reliability of Bulk Acoustic Wave Resonators at High Power and High Frequency;IEEE Transactions on Device and Materials Reliability;2011-06

5. Electromigration failure in nanoscale copper interconnects;Electromigration in Thin Films and Electronic Devices;2011

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