SIMS and microelectronics-Reference-Cited by-同舟云学术

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SIMS and microelectronics

Published:1994-08 Issue:3 Volume:38 Page:203-223
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Chu Paul K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference88 articles.

1. Secondary Ion Mass Spectrometry: Basic Concepts, Instrumental Aspects, Applications and Trends;Benninghoven,1987

2. Some problems encountered in secondary ion emission applied to elementary analysis

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of furnace contamination on superconducting radio frequency niobium using secondary-ion mass spectrometry;Journal of Vacuum Science & Technology B;2023-05-01

2. Depth Profiling of Metal Overlayers on Organic Substrates with Cluster SIMS;Analytical Chemistry;2013-10-10

3. Cluster Secondary Ion Mass Spectrometry (SIMS) For Semiconductor and Metals Depth Profiling;Cluster Secondary Ion Mass Spectrometry;2013-04-15

4. Determination of Trace Elements in Silicon Powders by Inductively Coupled Plasma Quadrupole Mass Spectrometry With a Membrane Desolvation Sample Introduction System;Atomic Spectroscopy;2012-02-25

5. Hybrid elevated-temperature, low/high-voltage plasma immersion ion implantation of AISI304 stainless steel;Surface and Coatings Technology;2001-01

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