New developments in MEMS using SiC and TiNi shape memory alloy materials-Reference-Cited by-同舟云学术

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New developments in MEMS using SiC and TiNi shape memory alloy materials

Published:1997-10 Issue:5 Volume:2 Page:566-570
ISSN:1359-0286
Container-title:Current Opinion in Solid State and Materials Science
language:en
Short-container-title:Current Opinion in Solid State and Materials Science

Author:

Zorman Christian A,Mehregany Mehran,Kahn Harold,Heuer Arthur H

Publisher

Elsevier BV

Subject

General Materials Science

Reference53 articles.

1. Silicon carbide electronic materials and devices;Capano;Mater Res Bull,1997

2. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies;Morkoc;J Appl Phys,1994

3. Epitaxial growth of 3C-SiC films of 4-in. diam. (100) silicon wafers by atmospheric pressure chemical vapor deposition;Zorman;J Appl Phys,1995

4. Deposition of fluorinated a-SiC:H films at room temperature;Kim;J Electrochem Soc,1994

5. Preparation of polycrystalline SiC thin films by RF magnetron sputtering using multi-target;Kobayashi,1996

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonlinear Coupled Field Finite Element Procedure for Modeling of Shape Memory Alloy Components in Multi-physics Applications;Mechanics of Advanced Materials and Structures;2010-01-29

2. The Investigation of a Shape Memory Alloy Micro-Damper for MEMS Applications;Sensors;2007-09-11

3. MEMS-based active skin for turbulent drag reduction;SPIE Proceedings;2003-08-05

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