Processes in silicon deposition by hot-wire chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
General Materials Science
Reference42 articles.
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2. Wiesmann HJ. US patent 4 237 150, December 2, 1980.
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1. Effects of Hot Wire Temperature on Properties of GeSi:H Films with High Hydrogen Dilution by Hot-Wire Chemical Vapor Deposition;Wuhan University Journal of Natural Sciences;2019-09-12
2. Effect of pressure on the gas-phase chemistry when using monomethylsilane and dimethylsilane in hot-wire chemical vapor deposition;Canadian Journal of Chemistry;2015-01
3. Hydrogen Terminated Silicon Nanopowders: Gas Phase Synthesis, Oxidation Behaviour, and Si-H Reactivity;Silicon;2014-06-28
4. Effects of H2 and Ar flow rates on the deposition of hydrogenated silicon thin films by an inductive coupled plasma-chemical vapor deposition system;Thin Solid Films;2013-10
5. Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique;Materials Chemistry and Physics;2012-08
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