Effects of Hot Wire Temperature on Properties of GeSi:H Films with High Hydrogen Dilution by Hot-Wire Chemical Vapor Deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11859-019-1413-7.pdf
Reference16 articles.
1. Dominguez M, Rosales P, Torres A, et al. Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors [J]. Thin Solid Films, 2014, 562(26): 260–263.
2. Han S Y, Jeon K S, Cho B, et al. Characteristics of a-SiGe:H thin film transistor infrared photosensor for touch sensing displays [J]. IEEE Journal of Quantum Electronics, 2012, 48(7): 952–959.
3. Ducros C, Szambolics H, Emieux F, et al. Back reflectors with periodic gratings for light trapping in a-SiGe:H solar cells [J]. Thin Solid Films, 2016, 620: 10–16.
4. Doyle J R, Xu Y, Reedy R, et al. Film stoichiometry and gas dissociation kinetics in hot-wire chemical vapor deposition of a-SiGe:H [J]. Thin Solid Films, 2008, 516(5): 526–528.
5. Jadkar S R, Sali J V, Kshirsagar S T, et al. The effect of substrate temperature on HW-CVD deposited a-SiGe:H films [J]. Journal of Non-Crystalline Solids, 2002, 299(2): 168–173.
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