A continuum model for the Liquid Phase Diffusion growth of bulk SiGe single crystals

Author:

Yildiz Mehmet,Dost Sadik

Publisher

Elsevier BV

Subject

General Engineering,Mechanics of Materials,General Materials Science,Mechanical Engineering

Reference28 articles.

1. Re-engineering silicon: Si–Ge heterojunction bipolar technology;Cressler;IEEE Spectrum,1995

2. Extremely high electron mobility in SixGe1−x structures grown by molecular beam epitaxy;Mii;Appl. Phys. Lett.,1991

3. M. Jutzi, M. Berroth, in: E. Kasper, K. Lyutovich, (Eds.), SiGe-based photodetectors for optical communications: properties of silicon germanium and SiGe:Carbon, INSPEC 2000, London, p. 342.

4. High quality relaxed SiGe epitaxial layers for solar cell application;Said;Thin Solid Films,1999

5. Silicon–germanium alloys as high-temperature thermoelectric materials;Bhandari;Contemp. Phys.,1980

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