Determination of implantation profiles in solids by secondary ion mass spectrometry-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Determination of implantation profiles in solids by secondary ion mass spectrometry

Published:1972-09 Issue:2 Volume:41 Page:177-178
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Maul J.,Schulz F.,Wittmaack K.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference12 articles.

1. Proc. II. Int. Conf. Ion Implantation in Semiconductors,1971

2. Proc. II. Int. Conf. Ion Implantation in Semiconductors;Gamo,1971

3. Antimony implanted silicon: A comparison between the total implanted concentration profile and the donor concentration profile

4. RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICON

5. Proc. II. Int. Conf. Ion Implantation in Semiconductors;Seidel,1971

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sputter depth profiling: past, present, and future;Surface and Interface Analysis;2014-04-24

2. Recollections of fifty years with sputtering;Thin Solid Films;2012-07

3. A History of Cameca (1954–2009);Advances in Imaging and Electron Physics;2011

4. SIMS: from research to production control;Surface and Interface Analysis;2003

5. Surface and depth analysis based on sputtering;Topics in Applied Physics;1991

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP