Charge stability of SiSiO2 systems and its changes induced by a pulsed magnetic field treatment-Reference-Cited by-同舟云学术

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Charge stability of SiSiO2 systems and its changes induced by a pulsed magnetic field treatment

Published:1995-01 Issue:3 Volume:197 Page:253-256
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Maslovsky Vladimir M.,Litchmanov Jury O.,Samsonov Nickolai S.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference7 articles.

1. Proc. IV Int. Scientific-technical Seminar on Nontraditional technologies;Maslovsky,1989

2. Int. Conf. on Advanced laser technologies, ALT-92;Klimov,1992

3. Relaxation processes induced in Si-SiO2 systems by ionizing radiation and pulsed magnetic field treating

4. Chaos and stability In defect processes in semiconductors;Corbett,1992

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. INTRINSIC GETTERING IN SILICON SUBSTRATE OF MOS STRUCTURES UNDER COMBINED INFLUENCE OF RADIATION AND PULSED MAGNETIC FIELDS;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2020

2. Magnetic-field induced generation of A-like centers in Cz-Si crystals;Physics Letters A;1999-09

3. Pulsed Magnetic Field Induced 3-D Islanding of Oxygen Contained Clusters in Cz-Si Crystals;MRS Proceedings;1999

4. Electrical properties of Si-SiO2 systems after the application of a magnetic field;Russian Physics Journal;1997-02

5. Influence of Electric Field and Temperature on Magnetic Field Induced Prolonged Changes of Electric Parameters of Silicon Systems;MRS Proceedings;1995

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