Silicon epitaxy by pulsed laser annealing of evaporated amorphous films
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference6 articles.
1. Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon
2. G. Foti, S.U. Campisano, E. Rimini and G. Vitali, Appl. Phys. Lett., to be published.
3. Silicon epitaxy by solid‐phase crystallization of deposited amorphous films
4. Silicon surface studies by means of proton backscattering and proton induced X-Ray emission
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1. Pulsed-Laser-Induced Epitaxial Growth of Silicon for Three-Dimensional Integrated Circuits;Subsecond Annealing of Advanced Materials;2014
2. Solid-State Epitaxy;Growth of Crystals;1987
3. Effect of laser irradiation on the electrical properties of amorphous germanium films;Journal of Materials Science;1986-08
4. Transient annealing of semiconductors by laser, electron beam and radiant heating techniques;Reports on Progress in Physics;1985-08-01
5. Electron beam induced explosive crystallization of unsupported amorphous germanium thin films;Journal of Applied Physics;1984-01-15
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