Point defects in neutron-transmutation-doped Czochralski-grown Si studied by positron annihilation

Author:

Meng X.T.,Liolios A.K.,Chardalas M.,Dedoussis Sp.,Eleftheriadis C.A.,Charalambous Staf.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference23 articles.

1. Neutron-transmutation-doped silicon;Cleland,1981

2. Proc. Int. Conf. on Semicond. Mater. and IC Tech.,1986

3. Radiation damage in neutron transmutation doped silicon: Electrical property studies

4. Positron Annihilation in Neutron-Irradiatedp-Type Silicon

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3. Positron annihilation and NMR studies of thin multilayered Co/Si structure;Journal of Magnetism and Magnetic Materials;1995-07

4. Annealing behaviour of defects in neutron transmutation doped silicon;Radiation Effects and Defects in Solids;1995-03

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