Saturation values of the electron drift velocity in silicon between 300°K and 4.2°K-Reference-Cited by-同舟云学术

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Saturation values of the electron drift velocity in silicon between 300°K and 4.2°K

Published:1970-06 Issue:3 Volume:32 Page:147-148
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Canali C.,Ottaviani G.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference12 articles.

1. Experimental results on the drift velocity of hot carriers in silicon and associated anisotropic effects

2. Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique

3. MEASUREMENT OF THE VELOCITY FIELD CHARACTERISTIC OF ELECTRONS IN GERMANIUM

4. A. Alberigi Quaranta. C. Canali and G. Ottaviani, to be published on Rev. Sci. Instr.

5. Temperature dependence of hot electron drift velocity in silicon at high electric field

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