Lattice strain in ion-bombarded Si studied by X-ray Moiré technique
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference7 articles.
1. Radiation effects in semiconductors;Schwuttke,1968
2. X-Ray Investigation of Lattice Deformations in Silicon Induced through High-Energy Ion Implantation
3. LATTICE EXPANSION AND STRAIN IN ION‐BOMBARDED GaAs AND SI
4. SENSITIVE TECHNIQUE FOR STUDYING ION‐IMPLANTATION DAMAGE
5. AN X‐RAY INTERFEROMETER
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3. X-ray interferometry study of deformation fields in silicon crystals, induced by a constant magnetic field;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2013-11
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5. X-ray and neutron interferometry;Topics in Applied Physics;1977
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