The Z1-dependence of electronic stopping
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference8 articles.
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4. F.H. Eisen, Can. J. Phys., to be published.
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2. Influence from the electronic shell structure on the range distribution during channeling of 40–300 keV ions in 4H-SiC;Journal of Applied Physics;2021-08-21
3. On the influence of uncertainties in scattering potentials on quantitative analysis using keV ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-05
4. Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices;Japanese Journal of Applied Physics;2019-04-09
5. Stopping of Slow Ions;Springer Series in Solid-State Sciences;2014
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