Evaporation and ripple formation during pulsed laser irradiation of GaAs-Reference-Cited by-同舟云学术

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Evaporation and ripple formation during pulsed laser irradiation of GaAs

Published:1983-01 Issue:5 Volume:93 Page:253-256
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Boerma D.O.,Hasper H.,Prasad K.G.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference19 articles.

1. Proc. M.R.S. Symp. on Laser and electron-beam solid interactions and material processing,1981

2. Proc. M.R.S. Symp. on Defects in semiconductors,1981

3. Laser-solid interactions and laser processing;Gamo,1979

4. Proc. M.R.S. Symp. on Laser and electron-beam solid interactions and material and material processing;Wood,1981

5. Melting phenomena and pulsed‐laser annealing in semiconductors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser-induced damaged formation and tungsten deposition on GaAs;Applied Surface Science;1992-01

2. Surface structures on crystalline silicon irradiated by 10 ps laser pulses at 694.3 nm;Applied Physics A Solids and Surfaces;1989-05

3. Stimulated Wood's anomalies on laser-illuminated surfaces;IEEE Journal of Quantum Electronics;1986-08

4. Rapid Annealing of GaAs and Related Compounds;MRS Proceedings;1984

5. Pulsed Laser Annealing of GaAs: A Comparison Between Calculation and Experiment;Springer Series in Chemical Physics;1984

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