SiGe alloys and heterojunctions - extending the performance of Si devices-Reference-Cited by-同舟云学术

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SiGe alloys and heterojunctions - extending the performance of Si devices

Published:1997-02 Issue:1 Volume:2 Page:48-53
ISSN:1359-0286
Container-title:Current Opinion in Solid State and Materials Science
language:en
Short-container-title:Current Opinion in Solid State and Materials Science

Author:

Kasper Erich

Publisher

Elsevier BV

Subject

General Materials Science

Reference48 articles.

1. Recent advances and future trends of ULSI technologies;Iwai,1996

2. SiGe,1995

3. Group IV heterostructure physics and devices;Kasper,1996

4. SiGe band engineering for MOS, CMOS and quantum effect devices;Wang;J Mater Sci Mater Electronics,1995

5. Silicium germanium heterodevices;Kasper;Appl Surf Sci,1996

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vacancy-oxygen defects in p-type Si1−xGex;Journal of Applied Physics;2014-10-07

2. Production and evolution of A-centers in n-type Si1−xGex;Journal of Applied Physics;2013-03-21

3. Improved performance of trench power MOSFET with SiGeC-based channel;Microelectronics Reliability;2011-02

4. Magnetotransport effects in semiconductors;Handbook of Thin Films;2002

5. Carbon-containing heteroepitaxial silicon and silicon/germanium thin films on Si(001);Handbook of Thin Films;2002

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