Numerical simulation of liquid-encapsulant float zone growth of indium phosphide crystals in zero gravity
Author:
Publisher
Elsevier BV
Subject
Fluid Flow and Transfer Processes,Mechanical Engineering,Condensed Matter Physics
Reference16 articles.
1. Numerical investigation of FZ-growth of GaAs with encapsulant;Li;Int. J. Heat Mass Transfer,2004
2. Magnetic stabilization of the buoyant convection in the liquid encapsulated Czochralski process;Walker;J. Cryst. Growth,2002
3. Dopant segregation during liquid encapsulated Czochralski crystal growth in a steady axial magnetic field;Morton;J. Cryst. Growth,2002
4. Magnetic field effects during liquid encapsulated Czochralski growth of doped photonic semiconductor crystals;Morton;J. Cryst. Growth,2003
5. Modeling of high pressure, liquid-encapsulated Czochraski growth of InP crystal;Zhang;J. Cryst. Growth,1996
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1. Dynamics analysis of twin formation for InP and preparation of 6 inch InP single crystals;CrystEngComm;2024
2. Regulation of the Temperature Field and Evolution of the Melt Convection Field During InP Crystal Growth with the Vertical Gradient Freeze Method;Journal of Electronic Materials;2023-08-24
3. Literature Survey of Numerical Heat Transfer (2000–2009): Part II;Numerical Heat Transfer, Part A: Applications;2011-12
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