Synergistic effect of strain and oxygen vacancy on the ferroelectric properties of hafnium oxide-based ferroelectric films-Reference-Cited by-同舟云学术

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Synergistic effect of strain and oxygen vacancy on the ferroelectric properties of hafnium oxide-based ferroelectric films

Published:2023-03 Issue: Volume:221 Page:112036
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Deng Yuhui,Yang Wanting,Lin Xin,Liao Ningtao,Zhu Bingyan,Yang Qiong,Jiang Jie,Jiang Limei

Funder

Natural Science Foundation of Hunan Province

Scientific Research Foundation of Hunan Provincial Education Department

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference41 articles.

1. Next generation ferroelectric materials for semiconductor process integration and their applications;Mikolajick;J. Appl. Phys.,2021

2. The high-k solution: Microprocessors entering production this year are the result of the biggest transistor redesign in 40 years;Bohr;IEEE Spectr.,2007

3. Ferroelectricity in hafnium oxide thin films;Böscke;Appl. Phys. Lett.,2011

4. Ferroelectric HfO2-based materials for next-generation ferroelectric memories;Fan;J. Adv. Dielectr.,2016

5. Review and perspective on ferroelectric HfO2-based thin films for memory applications;Park;MRS Commun.,2018

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO₂ thin films;Chinese Physics B;2024-08-01

2. Optimization of Ferroelectric Properties of HfO₂-Based Thin Films by Ion Irradiation;IEEE Transactions on Nuclear Science;2024-05

3. Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films;Journal of Applied Physics;2024-03-18

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