Atomic and electronic structures of Si[001] (130) symmetric tilt grain boundaries based on first-principles calculations-Reference-Cited by-同舟云学术

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Atomic and electronic structures of Si[001] (130) symmetric tilt grain boundaries based on first-principles calculations

Published:2012-06 Issue: Volume:58 Page:38-44
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Huang Wen Lai,Ge Wei,Li Chengxiang,Hou Chaofeng,Wang Xiaowei,He Xianfeng

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference32 articles.

1. Correlation between atomic structure and localized gap states in silicon grain boundaries

2. Atomic and electronic structure of high-energy grain boundaries in silicon and carbon

3. Detection of inactive defects in crystalline silicon by high-resolution transmission-electron energy-loss spectroscopy

4. Interfacial state and potential barrier height associated with grain boundaries in polycrystalline silicon

5. Finding the low-energy structures of Si[001] symmetric tilted grain boundaries with a genetic algorithm

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Misorientation and Temperature Dependence of Small Angle Twist Grain Boundaries in Silicon: Atomistic Simulation of Directional Growth;Crystal Growth & Design;2023-03-23

2. On the Formation and Multiplicity of Si [001] Small Angle Symmetric Tilt Grain Boundaries: Atomistic Simulation of Directional Growth;Crystal Growth & Design;2022-11-16

3. Exploring silicon [0 0 1] small angle symmetric tilt grain boundaries: Structures, energies and stress fields;Applied Surface Science;2022-10

4. Structures and energies of Σ3 asymmetric tilt grain boundaries in silicon;Journal of Materials Research;2021-05-13

5. Revisiting the structures and energies of silicon 〈110〉 symmetric tilt grain boundaries;Journal of Materials Research;2019-01-08

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