Band structures for Ge3N4 polymorphs studied by DFT-LDA and GWA-Reference-Cited by-同舟云学术

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Band structures for Ge3N4 polymorphs studied by DFT-LDA and GWA

Published:2013-02 Issue: Volume:67 Page:292-295
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Gao Shang-Peng,Cai Guanhua,Xu Yuan

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference29 articles.

1. Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

2. Electronic structure of germanium nitride considered for gate dielectrics

3. Crystalline Ge3N4 on Ge(111)

4. RuO2-Loaded β-Ge3N4 as a Non-Oxide Photocatalyst for Overall Water Splitting

5. Effect of High-Pressure Ammonia Treatment on the Activity of Ge3N4 Photocatalyst for Overall Water Splitting

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Interfacial Defects Characteristic and Low-Temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge- Based Mos Device and High Purity Germanium Detectors;2024

2. First-principles investigation of structural, Raman and electronic characteristics of single layer Ge3N4;Applied Surface Science;2022-01

3. Electronic Band Transitions in γ-Ge3N4;Electronic Materials Letters;2021-04-20

4. Accurate Mechanical and Electronic Properties of Spinel Nitrides from Density Functional Theory;The Journal of Physical Chemistry C;2021-04-14

5. Quasiparticle self-consistent GW energy band calculations for Ge3N4 phases;Physical Review B;2020-11-16

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