Kinetic Monte Carlo simulation of {111}-oriented SiC film with chemical vapor deposition-Reference-Cited by-同舟云学术

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Kinetic Monte Carlo simulation of {111}-oriented SiC film with chemical vapor deposition

Published:2008-10 Issue:4 Volume:43 Page:1036-1041
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Liu Cui-xia,Yang Yan-qing,Zhang Rong-jun,Ren Xiao-xia

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference20 articles.

1. Continuous fibre reinforced titanium and aluminium composites: a comparison

2. Depletion Effects of Silicon Carbide Deposition from Methyltrichlorosilane

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1. A multiscale model for CVD growth of silicon carbide;Computational Materials Science;2021-08

2. Influence of CH3SiCl3 consistency on growth process of SiC film by kinetic monte carlo method;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2012-10

3. A three-dimensional atomic scale simulations of CVD-SiC film growth in {111}, {110} and {100} family of planes;Computational Materials Science;2011-06

4. Multi-length scale Monte Carlo simulation of the growth process of SiC film by chemical vapor deposition;Applied Surface Science;2008-12

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