Effect of piezoelectricity on critical thickness for misfit dislocation formation at InGaN/GaN interface-Reference-Cited by-同舟云学术

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Effect of piezoelectricity on critical thickness for misfit dislocation formation at InGaN/GaN interface

Published:2015-02 Issue: Volume:97 Page:254-262
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Mishra D.,Cho Y.-H.,Shim M.-B.,Hwang S.,Kim S.,Park C.Y.,Seo S.Y.,Yoo S.-H.,Park S.-H.,Pak Y.E.

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference27 articles.

1. The Stability of a Dislocation Threading a Strained Layer on a Substrate

2. Misfit dislocations in In-rich InGaN/GaN quantum well structures

3. Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures

4. Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

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1. Interface Effects of Strain-Energy Potentials on Phase Transition Characteristics of VO₂ Thin-Films;ACS Omega;2023-05-30

2. Nanoindentation simulation of gallium nitride grown in Different orientations on a sapphire substrate using finite element method;Materials Today: Proceedings;2023

3. Novel machine learning-based prediction approach for nanoindentation load-deformation in a thin film: Applications to electronic industries;Computers & Industrial Engineering;2022-12

4. Analytical Model to Predict the Dislocation at Different Interfaces in Thin-Film Multilayer: Application to LED Multi-quantum Well (MQW);Lecture Notes in Mechanical Engineering;2019

5. Electroelastic fields for a piezoelectric threading dislocation in various growth orientations of gallium nitride;European Journal of Mechanics - A/Solids;2017-01

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