Structure and Spatial Distribution of Ge Nanocrystals Subjected to Fast Neutron Irradiation

Author:

Levy Shai12,Shlimak Issai12,Dressler David H.3,Grinblat Judith2,Gofer Yossi3,Lu Tiecheng4,Ionov Alexander N.5

Affiliation:

1. Jack and Pearl Redneck Institute of Advanced Technology, Bar-Ilan University, Israel

2. Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Israel

3. Department of Chemistry, Bar Ilan University, Israel

4. Department of Physics and Key Laboratory for Radiation Physics Technology of Ministry of Education, Sichuan University, P.R. China

5. A. F. Ioffe Physico-Technical Institute RAS, Russia

Abstract

The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC) embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by means of laser Raman Scattering (RS), High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). The irradiation of Ge-NC samples by a high dose of fast neutrons lead to a partial destruction of the nanocrystals. Full reconstruction of crystallinity was achieved after annealing the radiation damage at 8000C, which resulted in full restoration of the RS spectrum. HR-TEM images show, however, that the spatial distributions of Ge-NC changed as a result of irradiation and annealing. A sharp decrease in NC distribution towards the SiO2 surface has been observed. This was accompanied by XPS detection of Ge oxides and elemental Ge within both the surface and subsurface region.

Publisher

SAGE Publications

Subject

Electrical and Electronic Engineering,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Biotechnology

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