Abstract
We describe a new method for obtaining numerical solutions to the single-carrier conduction problem
(including diffusion) in insulators. The method is illustrated by treating the space-charge-limited
current problem in the case where both electrodes are ohmic, and traps in the insulator are assumed to
be absent, or shallow, or exponentially distributed in energy. Transformation of the conduction
equation to express charge density as a function of field, followed by straightforward numerical
solution, gives the current and voltage parametrically as functions of the field at the charge density
minimum. For voltages less than a few tenths of a volt the current is given by j ∝ U/d2l+1, and at
rather high voltages the standard result j ∝ Ul+1/d2l+1 is valid. Simple formulae, valid except at
very low voltages, are derived for the position and height of the potential maximum.
Cited by
39 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献