Author:
Yun Seung-Won,Kim Dae-Hyun
Funder
Defense Acquisition Program Administration
Ministry of Trade, Industry and Energy
Publisher
The Korean Sensors Society
Reference13 articles.
1. InAlAs/InGaAs HEMTs with Minimum Noise Figure of 1.0 dB AT 94 GHz
2. 850 GHz Receiver and Transmitter Front-Ends Using InP HEMT
3. A 660 GHz up-converter for THz communications
4. A 300 GHz low-noise amplifier S-MMIC for use in next-generation imaging and communication applications
5. H. B. Jo, S. W. Yun, J. G. Kim, D. Y. Yun, I. G. Lee, D. H. Kim, T. W. Kim, S. K. Kim, J. Yun, T. Kim, T. Tsutsumi, H. Sugiyama, and H. Matsuzaki, “Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz”, 2020 Int. Electron. Devices. Meet., pp. 8.4.1-8.4.4, 2020
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