2500 fps High-Speed Binary CMOS Image Sensor Using Gate/Body-Tied Type High-Sensitivity Photodetector-Reference-Cited by-同舟云学术

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2500 fps High-Speed Binary CMOS Image Sensor Using Gate/Body-Tied Type High-Sensitivity Photodetector

Published:2021-01-31 Issue:1 Volume:30 Page:61-65
ISSN:1225-5475
Container-title:JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY
language:en
Short-container-title:KSS

Author:

Kim Sang-Hwan,Kwen Hyeunwoo,Jang Juneyoung,Kim Young-Mo,Shin Jang-Kyoo

Funder

National Research Foundation of Korea

Ministry of Education

Integrated Circuit Design Education Center

Publisher

The Korean Sensors Society

Reference14 articles.

1. 320×240 oversampled digital single photon counting image sensor

2. CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays

3. Polarization-analyzing image sensor based on standard CMOS technology

4. Exploring the 3D integration technology for CMOS image sensors

5. In-Pixel Aperture CMOS Image Sensor for 2-D and 3-D Imaging

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector with High Sensitivity;JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY;2022-01-31

2. Effects of Transfer Gate on the Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector;JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY;2022-01-31

3. CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging;JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY;2021-09-30

4. Adjusting the Sensitivity of an Active Pixel Sensor Using a Gate/Body-Tied P-Channel Metal-Oxide Semiconductor Field-Effect Transistor-Type Photodetector With a Transfer Gate;JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY;2021-03-31

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