CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging-Reference-Cited by-同舟云学术

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CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging

Published:2021-09-30 Issue:5 Volume:30 Page:295-299
ISSN:1225-5475
Container-title:JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY
language:en
Short-container-title:KSS

Author:

Jang Juneyoung,Heo Wonbin,Kong Jaesung,Kim Young-Mo,Shin Jang-Kyoo

Funder

Samsung Electronics Company

National Research Foundation of Korea

Ministry of Education

Publisher

The Korean Sensors Society

Reference12 articles.

1. 256×256 CMOS active pixel sensor camera-on-a-chip

2. CMOS image sensors: electronic camera-on-a-chip

3. Review of CMOS image sensors

4. A CMOS image sensor for high-speed active range finding using column-parallel time-domain ADC and position encoder

5. H. Kwen, S. H. Kim, J. Lee, P. Choi, and J. K. Shin, “Simulation of high-speed and low-power CMOS binary image sensor based on gate/body-tied PMOSFET-type photodetector using double-tail comparator,” J. Sens. Sci. Technol., Vol. 29, No. 2, pp. 82–88, 2020.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Transfer Gate on the Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector;JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY;2022-01-31

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