Continuous Operation of High-Power Half-Bridge with 12 Paralleled GaN Power Devices-Reference-Cited by-同舟云学术

Continuous Operation of High-Power Half-Bridge with 12 Paralleled GaN Power Devices

Published:2022-05-15 Issue: Volume: Page:
ISSN:
Container-title:2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)
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Author:

Sawada Takashi¹,Tadano Hiroshi²,Shiozaki Koji²,Isobe Takanori³

Affiliation:

1. Naturanix Co., Ltd.,Research and Development Dept.,Tokyo,Japan

2. Institute of Materials and Systems for Sustainability, Nagoya University,Nagoya,Japan

3. University of Tsukuba,Faculty of Pure and Applied Sciences,Tsukuba,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9806820/9806821/09806956.pdf?arnumber=9806956

Reference11 articles.

1. An optimized layout with low parasitic inductances for GaN HEMTs based DC-DC converter

2. Chip Layout Optimization of SiC Power Modules Based on Multiobjective Electro-Thermal Design Strategy

3. Application of Variable Carrier Frequency Control by Using Wide Bandgap Semiconductors Inverter for WL TC Mode Driving;hori;2021 22nd IEEE International Conference on Industrial Technology (ICIT),0

4. Paralleling of Four 650V/60A GaN HEMTs for High Power Traction Drive Applications

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1. Continuous Operation of a Half-Bridge with Multi-Parallel GaN Power Devices for Increased Current Capability;IEEJ Journal of Industry Applications;2023-07-01

2. Paralleling 650 V/150 A GaN HEMTs for Cryogenically Cooled Solid-State Circuit Breaker Applications;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19