A 140 MHz 1 Mbit 2T1C gain-cell memory with 60-nm indium-gallium-zinc oxide transistor embedded into 65-nm CMOS logic process technology-Reference-Cited by-同舟云学术

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A 140 MHz 1 Mbit 2T1C gain-cell memory with 60-nm indium-gallium-zinc oxide transistor embedded into 65-nm CMOS logic process technology

Published:2017-06 Issue: Volume: Page:
ISSN:
Container-title:2017 Symposium on VLSI Circuits
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Author:

Ishizu Takahiko,Nagatsuka Shuhei,Yamaguchi Momoyo,Isobe Atsuo,Ando Yoshinori,Matsubayashi Daisuke,Kato Kiyoshi,Yao Hai Biao,Shuai Chi Chang,Lin Hung Chan,Wu J Y,Fujita Masahiro,Yamazaki Shunpei

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8000695/8008441/08008466.pdf?arnumber=8008466

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