224-ke Saturation signal global shutter CMOS image sensor with in-pixel pinned storage and lateral overflow integration capacitor-Reference-Cited by-同舟云学术

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224-ke Saturation signal global shutter CMOS image sensor with in-pixel pinned storage and lateral overflow integration capacitor

Published:2017-06 Issue: Volume: Page:
ISSN:
Container-title:2017 Symposium on VLSI Circuits
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Author:

Sakano Yorito,Sakai Shin,Tashiro Yoshiaki,Kato Yuri,Akiyama Kentaro,Honda Katsumi,Sato Mamoru,Sakakibara Masaki,Taura Tadayuki,Azami Kenji,Hirano Tomoyuki,Oike Yusuke,Sogo Yasunori,Ezaki Takayuki,Narabu Tadakuni,Hirayama Teruo,Sugawa Shigetoshi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8000695/8008441/08008498.pdf?arnumber=8008498

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An area‐effective and low‐power single‐slope ADC for DCG imaging CMOS image sensor;International Journal of Circuit Theory and Applications;2024-05-26

2. A 1.48e-rms Noise Global Shutter Pixel with 78dB Dynamic Range used for CMOS Image Sensor;2024 13th International Conference on Communications, Circuits and Systems (ICCCAS);2024-05-10

3. Two-Step Reset to Reduce the SNR Drop in the LOFIC CMOS Image Sensor;IEEJ Transactions on Electronics, Information and Systems;2024-04-01

4. An Area-Efficient up/down Double-Sampling Circuit for a LOFIC CMOS Image Sensor;Sensors;2023-05-04

5. Review on optical visual sensor technology;Journal of Image and Graphics;2023

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