Affiliation:
1. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, School of Microelectronics Tianjin University Tianjin China
2. Chongqing Optoelectronics Research Institute Chongqing China
Abstract
SummaryThis paper introduces an area‐effective and low‐power readout circuit structure tailored for high dynamic range (HDR) CMOS image sensors (CISs) utilizing dual conversion gain (DCG) imaging technology. A switched capacitor amplifier, which is applied at the comparator input port of the column‐parallel single‐slope analog‐to‐digital converter (SS ADC), is proposed to compensate for the charge injection and clock feed‐through introduced when the pixel switches between high conversion gain (HCG) and low conversion gain (LCG) modes. The proposed SS ADC is supplemented by the integration of a configurable counter, and the counter is specifically crafted for performing the A/D conversion of the readout voltage within a DCG pixel. Compared to the conventional DCG readout circuit, the proposed readout circuit use only one ADC for A/D conversion of HCG signals and LCG signals, which greatly reduces the area and power consumption of the readout circuit. Simulation results under 110 nm CMOS technology illustrate that the proposed 10‐bit SS ADC has a DNL of +0.78/−0.91 LSB and an INL of +1.91/−1.69 LSB, with a SNR of 57.2 dB and a SNDR of 55.95 dB, corresponding to an ENOB of 9 bits. The power consumption of the proposed SS ADC is 56.4 μW per column with a conversion time of 12 μs, and the simulation results show that the power consumption is 23.35% lower than the conventional structure and the area is saved by 24.69%.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China