8-1 A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory-Reference-Cited by-同舟云学术

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8-1 A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory

Published:2020-09-23 Issue: Volume: Page:
ISSN:
Container-title:2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
language:
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Author:

Kariya N.,Tsuda M.,Kurusu T.,Kondo M.,Nishitani K.,Tokuhira H.,Shimokawa J.,Yokota Y.,Tanimoto H.,Onoue S.,Shimada Y.,Kato T.,Hosotani K.,Arai F.,Fujiwara M.,Uchiyama Y.,Ohuchi K.

Funder

Western Digital

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9241573/9241588/09241626.pdf?arnumber=9241626

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The simplified and enlarged memory management with efficiency through cells;2024 4th International Conference on Advance Computing and Innovative Technologies in Engineering (ICACITE);2024-05-14

2. Modeling the Operation of Charge Trap Flash Memory—Part II: Understanding the ISPP Curve With a Semianalytical Model;IEEE Transactions on Electron Devices;2024-01

3. A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics;2021 IEEE International Memory Workshop (IMW);2021-05

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