Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers
Author:
Funder
Ministry of Science and Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9241573/9241588/09241603.pdf?arnumber=9241603
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1. Comparative Study of Nanowire FET & Internal Gate Nanowire FET;2024 2nd International Conference on Device Intelligence, Computing and Communication Technologies (DICCT);2024-03-15
2. Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs;IEEE Transactions on Nanotechnology;2024
3. A Physical-Based Artificial Neural Networks Compact Modeling Framework for Emerging FETs;IEEE Transactions on Electron Devices;2024-01
4. Nanosheet Field Effect Transistor Device and Circuit Aspects for Future Technology Nodes;ECS Journal of Solid State Science and Technology;2023-08-01
5. Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices Induced by Random Interface Traps;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02
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