Impact of Gate and Drain Leakage on V<sub>TH</sub> Drift and Dynamic-R<sub>ON</sub> of 100V p-GaN Gate AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Impact of Gate and Drain Leakage on V_TH Drift and Dynamic-R_ON of 100V p-GaN Gate AlGaN/GaN HEMTs

Published:2023-07-17 Issue: Volume: Page:
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Container-title:2023 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE)
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Author:

Cioni M.¹,Giorgino G.¹,Chini A.²,Parisi A.¹,Cappellini G.²,Modica L.²,Luongo G.¹,Miccoli C.¹,Castagna M. E.¹,Moschetti M.¹,Tringali C.¹,Iucolano F.¹

Affiliation:

1. STMicroelectronics,Catania,Italy,95121

2. University of Modena and Reggio Emilia,Dipartimento di Ingegneria "Enzo Ferrari",Modena,Italy,41125

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10217210/10217189/10217244.pdf?arnumber=10217244

Reference16 articles.

1. Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

2. Dependence of ${V}_{\text {TH}}$ Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET

3. A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

4. Dynamic Threshold Voltage in $p$-GaN Gate HEMT

5. Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

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