Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS-Reference-Cited by-同舟云学术

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Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS

Published:2018-06 Issue: Volume: Page:
ISSN:
Container-title:2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES)
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Author:

Chevas Loukas,Nikolaou Aristeidis,Bucher Matthias,Makris Nikolaos,Papadopoulou Alexia,Zografos Apostolos,Borghello Giulio,Koch Henri D.,Faccio Federico

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8422065/8436585/08436809.pdf?arnumber=8436809

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Characterization Method for TID Versus Temperature Effects on Microelectronic Circuits;IEEE Transactions on Nuclear Science;2024-08

2. High-Voltage ESD Protection Devices With High Robustness of 13 kV and Strong Radiation Tolerance up to 200 krad(Si);IEEE Transactions on Electron Devices;2024-06

3. Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID;Journal of Instrumentation;2023-01-01

4. Reliability Analysis of Radiation Tolerant Low Voltage CCCII Circuit For Space Applications;Defence Science Journal;2022-12-06

5. Holistic Device Modeling: Toward a Unified MOSFET Model Including Variability, Aging, and Extreme Operating Conditions;IEEE Transactions on Circuits and Systems II: Express Briefs;2022-06

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