A Fully-Differential Travelling-Wave Amplifier up to 110 GHz in a 22 nm FD-SOI CMOS Technology
Author:
Affiliation:
1. Institute of Robust Power Semiconductor Systems, University of Stuttgart,Germany
2. Advantest Europe GmbH,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288901.pdf?arnumber=10288901
Reference8 articles.
1. Design of a differential distributed amplifier and oscillator using close-packed interleaved transmission lines
2. Performance Comparison of Broadband Traveling Wave Amplifiers in 130-nm SiGe:C SG13G2 and SG13G3 BiCMOS Technologies
3. A Cascaded Multi-Drive Stacked-SOI Distributed Power Amplifier With 23.5 dBm Peak Output Power and Over 4.5-THz GBW
4. Robust, Efficient Distributed Power Amplifier Achieving 96 Gbit/s With 10 dBm Average Output Power and 3.7% PAE in 22-nm FD-SOI
5. Efficient Linear Millimeter-Wave Distributed Transceivers in CMOS SOI
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