A D-Band Low-Noise-Amplifier in SiGe BiCMOS with Broadband Multi-Resonance Matching Networks-Reference-Cited by-同舟云学术

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A D-Band Low-Noise-Amplifier in SiGe BiCMOS with Broadband Multi-Resonance Matching Networks

Published:2023-09-18 Issue: Volume: Page:
ISSN:
Container-title:2023 18th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

De Filippi Guglielmo¹,Piotto Lorenzo¹,Bilato Andrea¹,Mazzanti Andrea¹

Affiliation:

1. University of Pavia,Department of Electrical, Computer and Biomedical Engineering,Italy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288669.pdf?arnumber=10288669

Reference10 articles.

1. A SiGe HBT $D$ -Band LNA With Butterworth Response and Noise Reduction Technique

2. Analysis and Design of D-Band Cascode SiGe BiCMOS Amplifiers With Gain-Bandwidth Product Enhanced by Load Reflection

3. 5G and E-Band Communication Circuits in Deep-Scaled CMOS

4. Design of Compact D-Band Amplifiers With Accurate Modeling of Inductors and Current Return Paths in 55-nm SiGe BiCMOS

5. A low-power wideband D-band LNA in a 130 nm BiCMOS technology for imaging applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 170GHz 5.5dB NF Low-Noise Amplifier in 55nm SiGe BiCMOS;2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2024-06-09

2. D-Band RX Front-End With a 0$^{\circ}$–360$^{\circ}$ Phase Shifter Based on Programmable Passive Networks in SiGe-BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024

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