GaN-based Power Amplifier MMIC and Module for D-Band Applications
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid-State Physics,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10289074.pdf?arnumber=10289074
Reference10 articles.
1. A 140-GHz 0.25-W PA and a 55-135 GHz 115-135 mW PA, High-Gain, Broadband Power Amplifier MMICs in 250-nm InP HBT
2. A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT
3. D-Band and G-Band High-Performance GaN Power Amplifier MMICs;?wikli?ski;IEEE Transactions on Microwave Theory and Techniques,2019
4. High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI
5. A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psat for Sub-THz Imaging System
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1. Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-06
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