Back-Hopping in Ultra-Scaled MRAM Cells
Author:
Affiliation:
1. Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic
2. Institute for Microelectronics, TU Wien, Gußhausstraße 27-29,Wien,Austria,A-1040
3. Silvaco Europe Ltd., Compass Point, St Ives,Cambridge,United Kingdom,PE27 5JL
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10159631/10159632/10159764.pdf?arnumber=10159764
Reference12 articles.
1. High-Performance Shape-Anisotropy Magnetic Tunnel Junctions down to 2.3 nm
2. Novel quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STTMRAM beyond 2Xnm;nishioka;Symposium on VLSI Technology,2019
3. Unified Drift-Diffusion Theory for Transverse Spin Currents in Spin Valves, Domain Walls, and Other Textured Magnets
4. Back-Hopping in Spin-Transfer-Torque Devices: Possible Origin and Countermeasures
5. Double spin-torque magnetic tunnel junction devices for last-level cache applications
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