Double spin-torque magnetic tunnel junction devices for last-level cache applications-Reference-Cited by-同舟云学术

Double spin-torque magnetic tunnel junction devices for last-level cache applications

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Hu G.¹,Safranski C.¹,Sun J. Z.¹,Hashemi P.¹,Brown S. L.¹,Bruley J.¹,Buzi L.¹,D'Emic C. P.¹,Galligan E.¹,Gottwald M. G.¹,Gunawan O.¹,Lee J.¹,Karimeddiny S.¹,Trouilloud P. L.¹,Worledge D. C.¹

Affiliation:

1. IBM-Samsung MRAM Alliance, IBM TJ Watson Research Center,Yorktown Heights,New York

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019402.pdf?arnumber=10019402

Reference7 articles.

1. Spin-transfer torque switching probability of CoFeB/MgO/CoFeB magnetic tunnel junctions beyond macrospin

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