A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET-Reference-Cited by-同舟云学术

A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET

Published:2019-05 Issue: Volume: Page:
ISSN:
Container-title:2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)
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Author:

Chen Jiangui¹,Li Yan¹,Liang Mei²,Kennel R.³,Liu Jiayu¹,Guo Haobo¹

Affiliation:

1. School of Electrical Engineering, Beijing Jiaotong University, China

2. Power Electronics, Cooperate research Center, ABB China, Cooperate research Center, China

3. Institute for Electrical Drive Systems and Power Electronics, Technical University of Munich, Germany

Publisher

IEEE

Link

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