Multistep Soft Turn-Off Time Control to Suppress the Overvoltage of SiC MOSFETs in Short-Circuit State-Reference-Cited by-同舟云学术

Multistep Soft Turn-Off Time Control to Suppress the Overvoltage of SiC MOSFETs in Short-Circuit State

Published:2022 Issue: Volume:10 Page:46408-46417
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Shim Minseob¹^ORCID,Lee Kyoungho¹^ORCID,Kim Jonghyun¹^ORCID,Kim Kihyun¹^ORCID

Affiliation:

1. Korea Electrotechnology Research Institute, Changwon, South Korea

Funder

Korea Electrotechnology Research Institute (KERI) Primary Research Program through the National Research Council of Science & Technology (NST) funded by the Ministry of Science and ICT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/9668973/09762271.pdf?arnumber=9762271

Reference32 articles.

1. A Novel IC Measurement Without Blanking Time for Short-Circuit Protection of High-Power IPM

2. Layout-Based Ultrafast Short-Circuit Protection Technique for Parallel-Connected GaN HEMTs

3. An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration

4. Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

5. A Tri-Slope Gate Driving GaN DC–DC Converter With Spurious Noise Compression and Ringing Suppression for Automotive Applications

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