Resonant Gate Drive Circuit for Parallel Connected MOSFETs
Author:
Affiliation:
1. Hefei University of Technology,School of Electrical and Automation Engineering,Hefei City,China
2. University of Southern Denmark,Centre for Industrial Electronics (CIE),Dep. of Mechanical and Electrical Engineering,Denmark
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264643.pdf?arnumber=10264643
Reference10 articles.
1. Dynamic gate resistance control for current balancing in parallel connected IGBTs
2. Applying Coupled Inductor to Voltage and Current Balanced Between Paralleled SiC MOSFETs for a Resonant Pulsed Power Converter
3. Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules
4. Oscillation analysis and current peak reduction in paralleled SiC MOSFETs
5. Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs
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